EP3SE260H780C4L vs EP3SE260H780C4LG Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C4L sa pamamagitan ng Intel at EP3SE260H780C4LG sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE260H780C4L EP3SE260H780C4LG
Brand Intel Altera
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Aktibo
Family Stratix III E Stratix III Enhanced (EP3SE)
Logic Elements 255,000 254,400
LABs/CLBs 10,200 —
Total RAM Bits 16,672,768 (16.7 Mbit) —
User I/O Count 488 —
Packhaging 780-ball FCBGA (HBGA 33x33 mm) 780-ball FineLine BGA (HBGA, 29 mm x 29 mm, 1.0 mm pitch)
Speed Grade C4 (middle/slow tier) C4 (commercial, mid-speed tier)
Core Voltage 0.9 V (nominal) —
Temperature ng Junction na Operasyon 0C to +85C (commercial) —
Uri ng Pagpapasok Surface Mount (flip-chip BGA) Surface Mount (BGA)
Level ng MSL [DATA_NEEDED: MSL level] 3 (per JEDEC J-STD-020)
Tindminan RoHS Compliant (lead-free per datasheet) Compliant (Pb-free HBGA)
Transceivers Up to 24 multi-gigabit transceivers —
Memory Interface DDR3, DDR2, QDRII+, RLDRAM II controllers —
Configuration Mode PS, FPP, JTAG with EPCS/EPCQ —
Adaptive Logic Modules (ALMs) — 101,760
Embedded Memory (M9K + M144K) — 18.36 Mbits
DSP Blocks (18-bit x 18-bit) — 768
18-bit x 18-bit Multipliers — 1,536
Transceivers (full-duplex) — 8 (up to 6.375 Gbps)
Maximum User I/O Pins — 488
Temperature Grade — Commercial (0C to +85C junction)
Process Technology — 65 nm TSMC low-power CMOS
Operating Voltage (Core) — 0.9 V / 1.0 V / 1.1 V (programmable)
External Memory Interface — Up to 800 Mbps DDR3, QDR II+, RLDRAM II
Hard IP Blocks — PCIe Gen2, 10GbE MAC, memory controllers

Mga Datasheets at Resources

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