EP4CE75F23I7N vs EP4CE75F23I8L Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE75F23I7N disebabkan oleh Intel dan EP4CE75F23I8L disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP4CE75F23I7N | EP4CE75F23I8L |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Line | Cyclone IV E | — |
| Family | Cyclone IV E (EP4CE) | Cyclone IV E |
| Logic Elements (LEs) | 75,408 | — |
| Logic Array Blocks (LABs) | 4,713 | — |
| Embedded Memory Bits | 2,810,880 bits (312 M9K blocks) | — |
| Distributed RAM Bits | 200 Kbits | — |
| Embedded 18x18 Multipliers | 15 | 274 |
| PLLs | 4 | 4 |
| Global Clocks | [DATA_NEEDED: global clock network count] | — |
| Maximum User I/Os | 292 | — |
| Core Voltage (VCCINT) | 1.2 V nominal | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) | — |
| Process Technology | 60 nm low-power CMOS | — |
| Kemasan | 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch) | 484-ball FBGA |
| Operating Temperature Grade | Industrial (I7: -40C to +100C Tj) | — |
| Configuration Modes | Active Serial (AS), Passive Serial (PS), JTAG | AS, PS, FPP, JTAG |
| External Memory Interfaces | DDR / DDR2 SDRAM, QDRII SRAM | — |
| Design Software | Quartus II / Quartus Prime | — |
| Status RoHS | Compliant | Compliant |
| Logic Elements | — | 75,408 |
| Embedded Memory (bits) | — | 2,810,880 |
| Number of M9K Memory Blocks | — | 305 |
| User I/O Pins | — | 292 |
| Global Clock Networks | — | 20 |
| Maximum User I/O | — | 292 |
| Suhu Operasi | — | -40C to +85C (Industrial) |
| Supply Voltage (Core) | — | 1.0 V / 1.2 V |
| I/O Standards Supported | — | LVDS, SSTL, HSTL, LVPECL, LVCMOS, LVTTL |
| Process Node | — | 60 nm low-leakage |
| Aras MSL | — | 3 |
| Jenis Pemasangan | — | Surface Mount (BGA) |