H5AN8G4NAFR-VKC vs H5AN8G4NAFR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G4NAFR-VKC disebabkan oleh SK hynix dan H5AN8G4NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G4NAFR-VKC | H5AN8G4NAFR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organisasi | 2G x 4 | 1G x 4 |
| Kadar Data | 2666 Mbps per pin (DDR4-2666) | — |
| CAS Latency (CL) | 19 (CL19, speed bin VK) | [DATA_NEEDED: CL for -RDC bin] |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Kemasan | 78-ball FBGA (PBGA78) | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free) |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Application | Main memory requiring large density and high bandwidth | — |
| Datasheet Revision | Rev. 1.2 (Jul. 2017) | Rev. 1.2 / Jul. 2017 |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: Refresh specification] | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| Data Rate Class | — | [DATA_NEEDED: exact -RDC speed bin MT/s] |
| Antaramuka | — | Synchronous, differential clock CK_t/CK_c |
| Bank Architecture | — | DDR4 bank-group architecture |
| Boson Bebas | — | Yes |
| Manufacturer | — | SK hynix |