H5AN8G4NAFR-VKC vs H5AN8G4NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G4NAFR-VKC sa pamamagitan ng SK hynix at H5AN8G4NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G4NAFR-VKC | H5AN8G4NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organisasyon | 2G x 4 | 1G x 4 |
| Rate ng Data | 2666 Mbps per pin (DDR4-2666) | — |
| CAS Latency (CL) | 19 (CL19, speed bin VK) | [DATA_NEEDED: CL for -RDC bin] |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Packhaging | 78-ball FBGA (PBGA78) | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free) |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Application | Main memory requiring large density and high bandwidth | — |
| Datasheet Revision | Rev. 1.2 (Jul. 2017) | Rev. 1.2 / Jul. 2017 |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: Refresh specification] | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| Data Rate Class | — | [DATA_NEEDED: exact -RDC speed bin MT/s] |
| Interface | — | Synchronous, differential clock CK_t/CK_c |
| Bank Architecture | — | DDR4 bank-group architecture |
| Wala sa Halogen | — | Yes |
| Manufacturer | — | SK hynix |