H5AN8G8NAFR-PBC vs H5AN8G4NAFR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-PBC disebabkan oleh SK hynix dan H5AN8G4NAFR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NAFR-PBC | H5AN8G4NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 2Gb x 4 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | FBGA-78 | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Antaramuka | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Interface Voltage (VDD/VDDQ) | — | 1.2 V +/- 0.06 V |
| Wordline Pump Voltage (VPP) | — | 2.5 V (+0.25/-0.125 V) |
| Speed Bins (per datasheet) | — | DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) |
| Bank Groups | — | 4 (BG0-BG1) |
| Banks | — | 16 (4 bank groups x 4 banks) |
| Row Address | — | A0-A16 (17 bits) |
| Technology | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (RoHS Compliant per datasheet) |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | — | [DATA_NEEDED: CL for PBC speed bin] |
| Geardown Mode Note | — | DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled |