H5ANAG6NBJR-UHC vs H5AN4G6NBJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-UHC disebabkan oleh SK hynix dan H5AN4G6NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NBJR-UHC H5AN4G6NBJR-PBC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
Organisasi 256M x 16 256M x 16 (268435456 words x 16 bits)
Antaramuka DDR4 (CMOS) DDR4 (double data rate, synchronous)
Kemasan PBGA96 / FBGA-96 (TFBGA) FBGA-96 (PBGA96), rectangular
Package Dimensions 13 mm length (per JESD-30 R-PBGA-B96) —
Access Mode Multi Bank, Page Burst —
Suhu Operasi -40C to +95C [DATA_NEEDED: temperature range for -C grade]
Refresh Auto / Self Refresh —
Data Mask Supported (DM function) —
Asynchronous Reset Supported —
On-Chip Termination Dynamic ODT —
ZQ Calibration Supported —
Write Leveling Supported —
CRC Supported —
Supply Voltage Class DDR4 (1.2 V class) —
Status RoHS RoHS Compliant —
REACH Compliance Compliant —
ECCN EAR99 —
HTS Code 8542.32.00.36 —
Latensi CAS [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CAS latency for PBC speed grade]
Max Data Rate [DATA_NEEDED: Max Data Rate] —
Memory Density — 4 Gbit
Supply Voltage (VDD) — 1.2 V
Package Code — TFBGA
Number of Terminals — 96
Jenis Pemasangan — Surface Mount
Ciri-ciri — Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC
Data Rate / Speed Grade — [DATA_NEEDED: speed grade PBC data rate]
Process — CMOS
Lead-Free / Halogen-Free — Yes (per family datasheet, Lead-Free & Halogen-Free)
Temperature Grade — OTHER (per distributor listing)

Laporan Datasheet & Sumber

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