H5ANAG8NBJR-PBC vs H5ANAG6NBJR-VKC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG8NBJR-PBC disebabkan oleh SK hynix dan H5ANAG6NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5ANAG8NBJR-PBC H5ANAG6NBJR-VKC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (2 GB) —
Organisasi x8 [DATA_NEEDED: x16 organization per datasheet]
Supply Voltage (VDD) 1.2 V —
Speed Grade / Data Rate PBC suffix, DDR4-2666 class —
Kemasan FBGA-78 (7.5 mm x 11 mm) FBGA-96 (PBGA96)
Jenis Pemasangan Surface Mount Surface Mount
Bank Architecture 16 banks in 4 bank groups (DDR4 standard) —
Prefetch 8n —
Jenis Antaramuka Parallel, SSTL12 —
Suhu Operasi [DATA_NEEDED: operating temperature range] -40C to +95C (family grade reference)
CAS Latency (typical bin) [DATA_NEEDED: CAS latency] —
Refresh Self refresh, 1x/2x/4x refresh modes —
Die Revision BJR —
Status RoHS Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) [DATA_NEEDED: RoHS status]
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Standard Package Quantity [DATA_NEEDED: standard quantity] —
Manufacturer — SK Hynix
Part Number — H5ANAG6NBJR-VKC
Memory Density — 16Gb (2GB)
Kadar Data — 2666 Mbps (per family reference, VKC speed code)
Tegangan Pemberi Arus — 1.2 V (DDR4 standard)
Antaramuka — DDR4, SSTL-12
Auto Self-Refresh — Yes
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes

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