H5ANAG8NBJR-RDC vs H5ANAG8NBJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG8NBJR-RDC disebabkan oleh SK hynix dan H5ANAG8NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG8NBJR-RDC H5ANAG8NBJR-PBC
Merek SK hynix SK hynix
Kategori DRAM DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit 16 Gbit (2 GB)
Organisasi 2G x 8 x8
Supply Voltage (VDD) 1.2 V 1.2 V
I/O Voltage (VDDQ) 1.2 V —
Antaramuka SSTL12 —
Speed Grade (suffix R) DDR4-2666 class —
Kemasan 78-ball FBGA FBGA-78 (7.5 mm x 11 mm)
Jenis Pemasangan Surface Mount Surface Mount
Refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet) Self refresh, 1x/2x/4x refresh modes
Bank Groups 4 (per 16Gb DDR4 family datasheet) —
Data Strobe DQS with read/write training —
Data Bus Inversion Supported (DBI) —
Latensi CAS [DATA_NEEDED: CAS Latency] —
Suhu Operasi [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
Status RoHS Compliant (lead-free PBGA per family product data) Compliant (Lead-Free & Halogen-Free per Hynix family datasheet)
Status Lingkungan Hidup Active —
Speed Grade / Data Rate — PBC suffix, DDR4-2666 class
Bank Architecture — 16 banks in 4 bank groups (DDR4 standard)
Prefetch — 8n
Jenis Antaramuka — Parallel, SSTL12
CAS Latency (typical bin) — [DATA_NEEDED: CAS latency]
Die Revision — BJR
Aras MSL — [DATA_NEEDED: moisture sensitivity level]
Standard Package Quantity — [DATA_NEEDED: standard quantity]

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