H5TC4G63AFR-H9A vs H5TC4G63AFR-PBJ Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-H9A disebabkan oleh SK hynix dan H5TC4G63AFR-PBJ disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63AFR-H9A | H5TC4G63AFR-PBJ |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V |
| Kadar Data | 1866 Mbps (PC3-14900) | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| Latensi CAS | 13 | [DATA_NEEDED: CAS Latency] |
| Kemasan | 96-ball FBGA | 96-ball TFBGA |
| Suhu Operasi | 0C to +95C (TC) | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Burst Length | 8, 4 | — |
| On-Die Termination | Yes | — |
| Self-Refresh | Yes | — |
| Auto-Refresh | Yes | — |
| Saiz Ingatan | — | 4 Gb (256M x 16) |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | — | Yes |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Status RoHS | — | [DATA_NEEDED: RoHS Status] |