H5TC4G63AFR-PBR vs H5TC4G63AFR-G7A Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBR disebabkan oleh SK hynix dan H5TC4G63AFR-G7A disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5TC4G63AFR-PBR H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR ✓ Aktif
SK hynix
H5TC4G63AFR-G7A H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A ✓ Aktif

Pengandingan Spesifikasi

Parametr H5TC4G63AFR-PBR H5TC4G63AFR-G7A
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $5.91 —
Jenis Ingatan DDR3L SDRAM DDR3L SDRAM
Organisasi 256M x 16 256M x 16
Total Capacity 4Gb —
Tegangan Pemberi Arus 1.35V (1.5V compatible) 1.35V
Kadar Data 1600 Mbps (PC3L-12800) 1600 Mbps (PC3-12800)
Latensi CAS 11 Programmable (e.g., 11)
tRCD/tRP 11 —
Clock Frequency 800 MHz —
tCK 1.25 ns —
tRCD 13.125 ns —
Burst Length 8 (BL8) with burst chop (BC4) 8 and 4
Number of Banks 8 —
Refresh Interval 7.8us at 85C, 3.9us at 95C —
Kemasan 96-ball FBGA (PBGA96) 96-ball FBGA
Package Dimensions 13.5mm x 9.0mm —
Ball Pitch 0.8mm —
I/O Interface SSTL-15 —
Suhu Operasi 0C to +95C 0°C to 95°C (case)
RoHS Compliant Compliant
Lead-Free Yes Yes
Boson Bebas Yes Yes
Density — 4Gb
Refresh Period — 7.8us at 85°C
On-Die Termination — Supported
Process Technology — CMOS

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