IAUC100N04S6L014ATMA1 vs IAUC100N04S6L020ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L014ATMA1 disebabkan oleh Infineon dan IAUC100N04S6L020ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ AktifInfineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC100N04S6L014ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC / OptiMOS 6 40V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 °C to +175 °C (TJ) |
| Kemasan | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS 6 |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | — |
| Packaging | Tape & Reel (ATMA1 suffix) | Tape & Reel (TMA1) |
| FET Type | — | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Qualification | — | Automotive grade |