IAUC120N04S6L012ATMA1 vs IAUC60N04S6N031HATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N04S6L012ATMA1 disebabkan oleh Infineon dan IAUC60N04S6N031HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AktifInfineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC120N04S6L012ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | IAUC (Integrated Automotive Half-Bridge) |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | — |
| Power Dissipation (PD) at TC | 115 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (junction) | -55 °C to +175 °C (Tj) |
| Kemasan | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8-56 (5 mm x 6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Kiraan Pin | — | 8 |