IAUC120N06S5L011ATMA1 vs IAUC120N06S5N011ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N06S5L011ATMA1 disebabkan oleh Infineon dan IAUC120N06S5N011ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC120N06S5L011ATMA1 IAUC120N06S5N011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 60 V (S5 generation) OptiMOS-5
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8-53 (SSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Status RoHS Compliant —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (EAS) —
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) — 120 A (Tc=25°C, Vgs=10V)
Pulsed Drain Current (Idm) — 310 A (Tj)
On-Resistance Rds(on) max — 1.1 mΩ at Vgs=10 V
Gate-Source Voltage (Vgs) max — ±20 V
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total value]
Power Dissipation (Pd) — 188 W (Tc=25°C)
Gambaran Suhu Operasi — -55°C to +175°C (Tj)
RoHS Compliance — Compliant

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