IAUC28N08S5L230ATMA1 vs IAUZ20N08S5L300ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC28N08S5L230ATMA1 disebabkan oleh Infineon dan IAUZ20N08S5L300ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC28N08S5L230ATMA1 IAUZ20N08S5L300ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-5 —
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) 28 A —
Pulsed Drain Current (I<sub>DM</sub>) [DATA_NEEDED: pulsed drain current] —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 23 mΩ (typ) —
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) 2.5 V —
Gate Charge (Q<sub>g</sub>, typ) [DATA_NEEDED: total gate charge] —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) 38 W —
Suhu Hubungan Operasi -55 °C to +175 °C -55°C to +175°C
Kemasan PG-TDSON-8-33 (5x6 mm SSO8) PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS-5 Power MOSFET Trench MOSFET (OptiMOS-5)
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Product Family — OptiMOS-5
Polarity — N-Channel
Drain-Source Voltage (Vds) — 80 V
Continuous Drain Current (Id) — 20 A (Tc)
Power Dissipation (Pd) — 30 W (Tc)
On-State Resistance (Rds(on)) — 30 mΩ @ 10 A, 10 V
Gate Threshold Voltage (Vgs(th)) — ±20 V (max Vgs rating)
Input Capacitance (Ciss) — 599 pF @ 40 V
Total Gate Charge (Qg) — 10.5 nC @ 10 V
Qualification — AEC-Q101 (automotive)

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