IAUC28N08S5L230ATMA1 vs IAUZ20N08S5L300ATMA1 比較
詳細並排比較 IAUC28N08S5L230ATMA1 由 Infineon 與 IAUZ20N08S5L300ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ 啟用中
規格比較
| 參數 | IAUC28N08S5L230ATMA1 | IAUZ20N08S5L300ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | — |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | — |
| 工作接面溫度 | -55 °C to +175 °C | -55°C to +175°C |
| 封裝 | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | Trench MOSFET (OptiMOS-5) |
| Automotive Qualified | Yes (AEC-Q101) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Product Family | — | OptiMOS-5 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) | — | 20 A (Tc) |
| Power Dissipation (Pd) | — | 30 W (Tc) |
| On-State Resistance (Rds(on)) | — | 30 mΩ @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | — | ±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | — | 599 pF @ 40 V |
| Total Gate Charge (Qg) | — | 10.5 nC @ 10 V |
| Qualification | — | AEC-Q101 (automotive) |