IAUC50N08S5L096ATMA1 vs IAUC100N04S6N028ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC50N08S5L096ATMA1 disebabkan oleh Infineon dan IAUC100N04S6N028ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC50N08S5L096ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55 °C to +175 °C |
| Kemasan | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (TDSON-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Series | — | OptiMOS 6 40V |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Automotive Qualified | — | Yes |