IAUCN04S6N013TATMA1 vs IAUCN04S7N027GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S6N013TATMA1 disebabkan oleh Infineon dan IAUCN04S7N027GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S6N013TATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 230 A at T<sub>C</sub> —
R<sub>DS(on)</sub> (max) 1.32 mΩ at V<sub>GS</sub> = 10 V —
Power Dissipation (P<sub>D</sub>) 133 W at T<sub>C</sub> —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 2.6 V (typ) —
Total Gate Charge (Q<sub>g</sub>) 52 nC at V<sub>GS</sub> = 10 V —
Input Capacitance (C<sub>iss</sub>) 1.08 nF —
Output Capacitance (C<sub>oss</sub>) 3.7 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 51 pF —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-LHDSO-10-1 (SSO10T) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Kemasan / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Aras MSL — [DATA_NEEDED: MSL]
Substrate Compatibility — IMS substrates and legacy FR-4

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