IAUCN04S7N024HATMA1 vs IAUCN04S7N027GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N024HATMA1 disebabkan oleh Infineon dan IAUCN04S7N027GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N024HATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-7 40 V —
Configuration Dual N-Channel (independent) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 100 A —
On-Resistance R_DS(on) typ 2.46 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) max [DATA_NEEDED: max R_DS(on) at 10 V V_GS] —
Maximum Power Dissipation (Tc) 75 W —
Kemasan PG-TDSON-8-56 (SSO8 HB 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Automotive Qualification AEC-Q101 —
Technology OptiMOS-7 trench-gate —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: typical V_GS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total Qg] —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL]
Packing Tape & Reel —
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Kemasan / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga