IAUCN04S7N027GATMA1 vs IAUC120N04S6N010ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N027GATMA1 disebabkan oleh Infineon dan IAUC120N04S6N010ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7N027GATMA1 IAUC120N04S6N010ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Kemasan / Case PG-THSOG-4-1 (SSO4G 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL] 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Substrate Compatibility IMS substrates and legacy FR-4 —
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Technology — OptiMOS 6
Kemasan — PG-TDSON-8-34 (5x6 mm leadless)
Automotive Qualification — AEC-Q101
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

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