IAUCN04S7N037GATMA1 vs IAUC41N06S5N102ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N037GATMA1 disebabkan oleh Infineon dan IAUC41N06S5N102ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N037GATMA1 IAUC41N06S5N102ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology Trench MOSFET, N-Channel —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
Kemasan SSO4G 5x6 mm² (PG-THSOG-4-1) PG-TDSON-8-33 (SSO8) Surface Mount
Jenis Pemasangan Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 AEC-Q101 (per Infineon automotive MOSFET family)
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] —
Gambaran Suhu Operasi [DATA_NEEDED: junction/ambient temperature limits] -55C to +175C (junction)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Part Family — OptiMOS 5 Power-Transistor
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Channel Polarity — N-Channel (single)

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