IGLR70R270D2SXUMA1 vs ISC045N03L5SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGLR70R270D2SXUMA1 disebabkan oleh Infineon dan ISC045N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IGLR70R270D2SXUMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | — |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | OptiMOS 5 / Trench |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 30 V |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| Kemasan | PG-TSON-8-8 (ThinPAK) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| Status RoHS | Compliant | Compliant |
| Gambaran Suhu Operasi | -40C to +150C (junction) | -55 °C to +150 °C |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| Part Number | — | ISC045N03L5SATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |