IPB072N15N3GATMA1 vs IPD082N10N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB072N15N3GATMA1 disebabkan oleh Infineon dan IPD082N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB072N15N3GATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (V_DS) | 150 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 100 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed I_DM] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W | — |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | — |
| R_DS(on) max at VGS=10V | [DATA_NEEDED: max R_DS(on) at VGS=10V] | — |
| Gate-Source Voltage (V_GS) max | +/-20 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at VGS=10V] | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) | — |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) | — |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) | — |
| Part Number | — | IPD082N10N3GATMA1 |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Suhu Hubungan Operasi | — | -55°C to +175°C |
| Kemasan / Case | — | PG-TO252-3 (DPAK), surface mount |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |