IPB072N15N3GATMA1 vs IPD082N10N3GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB072N15N3GATMA1 tarafından Infineon ve IPD082N10N3GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPB072N15N3GATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (V_DS) | 150 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 100 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed I_DM] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W | — |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | — |
| R_DS(on) max at VGS=10V | [DATA_NEEDED: max R_DS(on) at VGS=10V] | — |
| Gate-Source Voltage (V_GS) max | +/-20 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at VGS=10V] | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C | — |
| Paket | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) | — |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) | — |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) | — |
| Part Number | — | IPD082N10N3GATMA1 |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| İşletim Jant Sıcaklığı | — | -55°C to +175°C |
| Paket / Kas | — | PG-TO252-3 (DPAK), surface mount |
| Pin Sayısı | — | 3 (Gate, Drain, Source) |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |
| MSL Seviyesi | — | 1 (per JEDEC J-STD-020) |