IPB35N10S3L26ATMA1 vs IPD50N06S409ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB35N10S3L26ATMA1 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB35N10S3L26ATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T —
Channel Type N-Channel —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Power Dissipation (PD) at TC 71 W —
Package Type PG-TO263-3 (D2PAK-2) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 3 (2 + Tab)
Channel Mode Enhancement —
RDS(on) (typical per Infineon product page) 26.3 mΩ —
Typical Gate Charge Qg @ Vgs 80 nC —
Maximum Drain-Source Resistance Rds 1.7 mΩ (per RS Components listing) —
Minimum Operating Temperature -55 C —
Maximum Power Dissipation Pd 81 W (per RS Components listing) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 qualification status] —
Technology — N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Kemasan — PG-TO252-3-11 (DPAK)
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

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