IPB35N10S3L26ATMA1 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveInfineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveSpecification Comparison
| Parameter | IPB35N10S3L26ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-T | β |
| Channel Type | N-Channel | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC | 35 A | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package Type | PG-TO263-3 (D2PAK-2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | 3 (2 + Tab) |
| Channel Mode | Enhancement | β |
| RDS(on) (typical per Infineon product page) | 26.3 mΞ© | β |
| Typical Gate Charge Qg @ Vgs | 80 nC | β |
| Maximum Drain-Source Resistance Rds | 1.7 mΞ© (per RS Components listing) | β |
| Minimum Operating Temperature | -55 C | β |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | β |
| Technology | β | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc | β | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | β | 9 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Package | β | PG-TO252-3-11 (DPAK) |
| Automotive Qualification | β | AEC-Q101 |
| Lead-Free / Halogen-Free | β | [DATA_NEEDED] |