IPB35N10S3L26ATMA2 vs IQE013N04LM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB35N10S3L26ATMA2 disebabkan oleh Infineon dan IQE013N04LM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB35N10S3L26ATMA2 | IQE013N04LM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Power-Transistor | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| Arus Alir Gesa | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| Kemasan | PG-TO263-3-2 (D2PAK) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C | -55 °C to +175 °C |
| Bilangan Pin | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Technology | — | OptiMOS N-channel trench MOSFET |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |