IPB60R190C6ATMA1 vs IPA60R190C6XKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R190C6ATMA1 disebabkan oleh Infineon dan IPA60R190C6XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB60R190C6ATMA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| Power Dissipation (PD) at Tc=25C | 151 W | — |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | 3.5 V |
| Total Gate Charge (Qg) typ | 32 nC | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (EAS per datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS C6 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | — | 34 W |
| On-State Resistance (RDS(on)) | — | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typ] |
| Tab Isolation | — | Fully isolated (4 kV) |
| Lead Free | — | Yes |