IPD031N03LGATMA1 vs BSC0501NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD031N03LGATMA1 disebabkan oleh Infineon dan BSC0501NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD031N03LGATMA1 BSC0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS 3 Trench-gate OptiMOS 5
Drain-to-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ 25 °C 90 A (Tc) —
Power Dissipation (Pd) 94 W (Tc) —
RDS(on) Max @ VGS=10V 3.1 mΩ —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: RDS(on) @ 4.5V] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/max] —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Charge (Qg) [DATA_NEEDED: Qg typical @ 10V Vgs] —
Output Charge (Qoss) Ultra low (per datasheet tagline) —
Suhu Operasi -55 °C to +175 °C (junction) —
Kemasan PG-TO252-3-11 (DPAK-2) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Mounting Tab Drain (electrically connected) —
Avalanche Energy Rated Yes (per OptiMOS 3 datasheet family) —
Status RoHS Compliant Compliant
Aras MSL 1 1 (per JEDEC J-STD-020)
Manufacturer — Infineon
Product Family — OptiMOS 5 25V/30V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Suhu Hubungan Operasi — -55C to +150C
Avalanche Rated — Yes

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