IPD060N03LGATMA1 vs IPD090N03LGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD060N03LGATMA1 disebabkan oleh Infineon dan IPD090N03LGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD060N03LGATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, TC=25C) | 50 A | — |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | 200 A | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| On-State Resistance (RDS(on), VGS=10V) | 6.0 mOhm (typ) / 7.5 mOhm (max) | — |
| On-State Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg, typ) | 21 nC | — |
| Output Charge (Qoss, typ) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | 56 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC, max) | 2.5 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | 62 C/W | — |
| Kemasan / Case | PG-TO252-3 (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (Unlimited) | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Packing | Tape & Reel (T/R), 2500 per reel | — |
| AEC-Q101 / Automotive Grade | Not qualified | — |
| Technology / Generation | OptiMOS 30V, trench MOSFET | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Gambaran Suhu Operasi | — | -55C to +175C (junction) |
| Kemasan | — | PG-TO252-3-11 (DPAK) |
| Technology Family | — | OptiMOS 30V |
| Configuration | — | Single |