IPD30N06S2L13ATMA4 vs IPD35N10S3L26ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N06S2L13ATMA4 disebabkan oleh Infineon dan IPD35N10S3L26ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD30N06S2L13ATMA4 | IPD35N10S3L26ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| Kemasan | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK-2) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | 100% avalanche tested |
| Technology | Planar (OptiMOS) | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| Kiraan Pin | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Part Number | — | IPD35N10S3L26ATMA1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 35 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | — | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | — | 71 W |
| Suhu Hubungan Operasi | — | -55°C to +175°C |
| Aras MSL | — | MSL1 (up to 260°C peak reflow) |
| RoHS / Halogen-Free | — | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg from datasheet] |