IPD380P06NMATMA1 vs BSZ065N06LS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD380P06NMATMA1 disebabkan oleh Infineon dan BSZ065N06LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD380P06NMATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage V(BR)DSS | 60 V | — |
| Arus Kumpal Tetap (TC=25°C) | 35 A | — |
| Power Dissipation (Tc) | 125 W | — |
| Technology | OptiMOS P-channel trench | OptiMOS™ 5 logic-level |
| Kemasan | PG-TO252-3 (DPAK), surface mount | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55°C to +150°C |
| Gate Drive | Logic-level compatible | — |
| Avalanche Rated | Yes (per manufacturer datasheet) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | — |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | — |
| Lead-Free | Yes | — |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 1.8 nF |