IPD50R399CPATMA1 vs BSC019N04LSTATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50R399CPATMA1 disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD50R399CPATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS CP | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 500 V | — |
| Continuous Drain Current (I_D, Tc) | 9 A | — |
| Power Dissipation (P_D, Tc) | 83 W | — |
| On-Resistance (R_DS(on), typ) | 0.399 ohm | — |
| Kemasan | PG-TO252-3-313 (DPAK) | TDSON-8 (SuperSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CoolMOS CP (superjunction) | OptiMOS 5 (N-channel trench MOSFET) |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Lead Free / RoHS | ROHS3 Compliant | — |
| Configuration | Single | — |
| Operating Mode | Enhancement-mode | — |
| Datasheet Series | IPD50R399CP | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Gambaran Suhu Operasi | — | -55 C to +150 C |
| Aras MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |