IPD65R380E6ATMA1 vs IPD038N06N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD65R380E6ATMA1 disebabkan oleh Infineon dan IPD038N06N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD65R380E6ATMA1 | IPD038N06N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ E6 | OptiMOS 60V |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | OptiMOS trench MOSFET |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | [DATA_NEEDED: operating temperature range] |
| Kemasan | PG-TO252-3 (DPAK), surface mount | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 |
| FET Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (typ) |
| On-Resistance (RDS(on)) at VGS=10V | — | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | — | 188 W |
| Boson Bebas | — | Yes |
| Lead-Free | — | Yes |
| Polarity | — | N-Channel |