IPD90N06S407ATMA2 vs IPD33CN10NGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90N06S407ATMA2 disebabkan oleh Infineon dan IPD33CN10NGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD90N06S407ATMA2 IPD33CN10NGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Enhancement Mode N-Channel
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D at T_C) 90 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
R_DS(on) Max at V_GS=10 V, I_D=90 A 6.9 mOhm —
Gate Threshold Voltage (V_GS(th)) 4 V at 40 uA —
Total Gate Charge (Q_G) at V_GS=10 V 56 nC —
Maximum Power Dissipation (P_D at T_C) 79 W —
Suhu Hubungan Operasi -55 C to +175 C —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Kemasan PG-TO252-3-11 (DPAK) PG-TO252-3 (DPAK), Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (Green Product) —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 Qualified —
Avalanche Rating 100% Avalanche Tested —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 27 A
Power Dissipation (PD, Tc) — 58 W
Technology — OptiMOS (Trench)
Kiraan Pin — 3 (Gate, Drain, Source)
Gambaran Suhu Operasi — -55C to +175C (TJ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Status RoHS — Compliant
Lead-Free — Yes
Aras MSL — 1

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