IPT067N20NM6ATMA1 vs ISC011N06LM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT067N20NM6ATMA1 disebabkan oleh Infineon dan ISC011N06LM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT067N20NM6ATMA1 ISC011N06LM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 60 V
Continuous Drain Current (ID) at TA=25C 15.3 A —
Continuous Drain Current (ID) at TC=25C 137 A —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 300 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan PG-HSOF-8-1 (8-pin + exposed tab) PG-TDSON-8-17 (SuperSO8 5x6 mm)
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +175C
Technology Trench-gate OptiMOS 6 silicon OptiMOS 5
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL moisture sensitivity level] [DATA_NEEDED: MSL level]
Configuration Single N-channel —
Part Number — ISC011N06LM5ATMA1
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta — 37 A
Continuous Drain Current (ID) at Tc — 288 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 188 W
RDS(on) max at VGS=10V — 1.15 mOhm
Kiraan Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

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