IQE008N03LM5CGATMA1 vs IQE036N08NM6CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE008N03LM5CGATMA1 disebabkan oleh Infineon dan IQE036N08NM6CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE008N03LM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 27 A | — |
| Continuous Drain Current (ID) at Tc=25C | 253 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | — |
| Gate-Source Voltage (VGS) Max | +/-16 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | — |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 89 W | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 C to +175 C (junction, Tj) |
| Kemasan | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | — |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Aras MSL | — | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| Configuration | — | Single N-channel, Source-Down |