IQE008N03LM5SCATMA1 vs IQE220N15NM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE008N03LM5SCATMA1 disebabkan oleh Infineon dan IQE220N15NM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE008N03LM5SCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS 5, Source-Down |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 4.6 V |
| Gate Drive Voltage | 10 V (recommended) | — |
| Kemasan | PG-WHSON-8 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| Configuration | Single N-Channel | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | -55C to +150C (junction) |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |