IQE013N04LM6ATMA1 vs IQE065N10NM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE013N04LM6ATMA1 disebabkan oleh Infineon dan IQE065N10NM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE013N04LM6ATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS 5 trench-gate |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| Kemasan | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-WHTFN-9-1 (Source-Down) |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55 C to +150 C |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Lead-Free | — | Yes |