IQE036N08NM6CGSCATMA1 vs IQE036N08NM6CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE036N08NM6CGSCATMA1 disebabkan oleh Infineon dan IQE036N08NM6CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif
Infineon
IQE036N08NM6CGATMA1 IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE036N08NM6CGSCATMA1 IQE036N08NM6CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 —
Part Status Active —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TA 16.7 A —
Continuous Drain Current (ID) at TC 118 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 125 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) —
Technology Trench MOSFET (OptiMOS 6) Trench MOSFET, OptiMOS 6
Configuration Source Down, Center Gate, Dual-Side Cooling Single N-channel, Source-Down
Gambaran Suhu Operasi -55 C to +150 C (junction, per datasheet derating curves) -55 C to +175 C (junction, Tj)
Packing Tape and Reel (suffix ATMA1) —
Voltage Rating 60 V to 100 V category (80 V nominal) —
Status RoHS Compliant Compliant
Product Family — OptiMOS 6
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 80 V
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Continuous Drain Current (Id) at Tc — 118 A
Continuous Drain Current (Id) at Ta — 16.7 A
Rds(on) max at Vgs=10V — 3.6 mOhm
Gate Threshold Voltage (Vgs(th)) — 3.5 V (max)
Power Dissipation at Tc — 125 W
Power Dissipation at Ta — 2.5 W
Kemasan — PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm)
Aras MSL — MSL1 (per JEDEC J-STD-020)

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