IQE220N15NM5CGSCATMA1 vs IPT017N12NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE220N15NM5CGSCATMA1 disebabkan oleh Infineon dan IPT017N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE220N15NM5CGSCATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 120 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| Kemasan | PG-WHTFN-9 (Source-Down) | PG-HSOF-8 (TOLL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 6 |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| Status RoHS | Compliant | Compliant |
| Part Number | — | IPT017N12NM6ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Suhu Operasi | — | -55C to +175C |
| Kiraan Pin | — | 8 + tab |
| Packaging | — | Tape & Reel |