IQE220N15NM5CGSCATMA1 vs IQE036N08NM6CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE220N15NM5CGSCATMA1 disebabkan oleh Infineon dan IQE036N08NM6CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifInfineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE220N15NM5CGSCATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 6 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| Kemasan | PG-WHTFN-9 (Source-Down) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (OptiMOS 6) |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 C to +150 C (junction, per datasheet derating curves) |
| Status RoHS | Compliant | Compliant |
| Part Status | — | Active |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| Kemasan / Case | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |