IQEH68NE2LM7UCGATMA1 vs IQEH54NE2LM7UCGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH68NE2LM7UCGATMA1 disebabkan oleh Infineon dan IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ AktifInfineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQEH68NE2LM7UCGATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (typical for OptiMOS 7) | -55C to +150C (typical MOSFET range) |
| Kemasan | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-3 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | — |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |