IRF3710STRLPBF vs IRFZ48NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF3710STRLPBF disebabkan oleh Infineon dan IRFZ48NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF3710STRLPBF IRFZ48NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel Power MOSFET
Technology HEXFET / IR MOSFET (planar) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25 C) 57 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max 23 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Total Gate Charge (Qg) 86.7 nC 54 nC
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (PD, Tc=25 C) 200 W —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan D2PAK (TO-263), surface mount D2PAK (TO-263) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant (Pb-free) Compliant
Lead-Free Yes —
Tape & Reel Orientation TRL (left) —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) @ Tc=25C — 64 A
Static Drain-to-Source On-Resistance (Rds(on)) — 14 mΩ at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Gate-to-Source Voltage (VGS) max — ±20 V
Power Dissipation (Pd) @ Tc=25C — 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 — 3.8 W
Suhu Hubungan Operasi — -55C to +175C
Packaging — Tape & Reel (13-inch reel, TRL)
Lead Finish — Lead-free (PBF) matte tin
Technology Family — HEXFET advanced process technology

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga