IRF5305PBF vs IRFR5305TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF5305PBF disebabkan oleh Infineon dan IRFR5305TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF5305PBF | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | 31 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissition (PD) at TC=25C | 110 W | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | — |
| Total Gate Charge (Qg) | 42 nC (typical) | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | — |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | — |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-220AB (through-hole, 3-pin + tab) | TO-252AA (DPAK) |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | — |
| Status RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Technology | HEXFET (planar DMOS) | HEXFET (IR MOSFET) |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Aras MSL | — | 1 |
| Lead-Free Finish | — | Yes (PBF suffix) |