IRF5305PBF vs IRFR5305TRPBF 比較

詳細並排比較 IRF5305PBF 由 Infineon 與 IRFR5305TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中

規格比較

參數 IRF5305PBF IRFR5305TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -31 A 31 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissition (PD) at TC=25C 110 W —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V 60 mOhm (typical) —
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A [DATA_NEEDED: max RDS(on) at -10V] —
Total Gate Charge (Qg) 42 nC (typical) —
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Turn-On Delay Time (td(on)) [DATA_NEEDED: td(on)] —
Turn-Off Delay Time (td(off)) [DATA_NEEDED: td(off)] —
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Thermal Resistance, Junction-to-Ambient (RthJA) [DATA_NEEDED: RthJA] —
工作接面溫度 -55C to +175C —
封裝 TO-220AB (through-hole, 3-pin + tab) TO-252AA (DPAK)
安裝類型 Through Hole Surface Mount
Lead-Free Plating (PBF suffix) Yes (Pb-free) —
RoHS 狀態 Compliant Compliant (Pb-free PBF suffix)
Technology HEXFET (planar DMOS) HEXFET (IR MOSFET)
Polarity — P-Channel
Drain-Source Voltage (VDS) Max — -55 V
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
工作溫度範圍 — -55 C to +175 C
MSL 等級 — 1
Lead-Free Finish — Yes (PBF suffix)

資料表與資源

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