IRF9530NPBF vs IRF4905SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9530NPBF disebabkan oleh Infineon dan IRF4905SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9530NPBF IRF4905SPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -55 V
Continuous Drain Current (ID) at TC=25°C -14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 200 mΩ —
Gate-Source Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ 38.7 nC —
Maximum Power Dissition at TC=25°C 79 W —
Suhu Hubungan Operasi -55°C to +175°C -55 C to +150 C
Kemasan TO-220AB (through-hole) D2PAK (TO-263) surface mount
Jenis Pemasangan Through Hole Surface Mount
Mounting Screw Torque (max) [DATA_NEEDED: maximum torque] —
Avalanche Rating Repetitive avalanche rated —
dv/dt Rating Dynamic dV/dt rated —
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS compliant —
Continuous Drain Current (ID, Tc=25C) — -42 A
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) — 170 W
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Technology — HEXFET, planar cell
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Status RoHS — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

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