IRF9530NPBF vs IRF4905SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF9530NPBF sa pamamagitan ng Infineon at IRF4905SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF9530NPBF IRF4905SPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -55 V
Continuous Drain Current (ID) at TC=25°C -14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 200 mΩ —
Gate-Source Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ 38.7 nC —
Maximum Power Dissition at TC=25°C 79 W —
Temperature ng Junction na Operasyon -55°C to +175°C -55 C to +150 C
Packhaging TO-220AB (through-hole) D2PAK (TO-263) surface mount
Uri ng Pagpapasok Through Hole Surface Mount
Mounting Screw Torque (max) [DATA_NEEDED: maximum torque] —
Avalanche Rating Repetitive avalanche rated —
dv/dt Rating Dynamic dV/dt rated —
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS compliant —
Continuous Drain Current (ID, Tc=25C) — -42 A
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) — 170 W
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Technology — HEXFET, planar cell
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Tindminan RoHS — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

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