IRFB4410PBF vs IRFB4020PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4410PBF disebabkan oleh Infineon dan IRFB4020PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFB4410PBF | IRFB4020PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) - HEXFET | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) | — |
| Continuous Drain Current (Id) @ 100C | [DATA_NEEDED: Id @ 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse] | — |
| Gate-to-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| RDS(on) max @ VGS=10V | 10 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) | 200 W (Tc) | — |
| Gambaran Suhu Operasi | -55C to +175C (Tj) | — |
| Kemasan | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| Aras MSL | 1 (unlimited) | — |
| Status RoHS | Compliant (Pb-free PBF suffix) | — |
| Series | HEXFET | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| Suhu Hubungan Operasi | — | 175 C (max) |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |