IRFH7440TRPBF vs BSC019N04LSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH7440TRPBF disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH7440TRPBF BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed ID limit]
On-Resistance (RDS(on) max at VGS=10V) 2.4 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Total Gate Charge (Qg) 92 nC —
Power Dissipation (PD, Tc=25°C) 104 W —
Suhu Hubungan Operasi -55°C to +150°C —
Technology StrongIRFET™ (HEXFET) OptiMOS 5 (N-channel trench MOSFET)
Kemasan 8-PQFN (5x6 mm) with exposed thermal pad TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Gate Drive Optimization 10V (Normal Level), switching < 100 kHz —
Qualification JEDEC standard —
Lead-Free / RoHS Lead-Free, RoHS Compliant (PBF suffix) —
MSL (Moisture Sensitivity Level) MSL 1 —
Typical Applications Brushed motor drive, DC-DC converters, solenoid/load switching —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Gambaran Suhu Operasi — -55 C to +150 C
Aras MSL — 1 (unlimited)
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga