IRFR1205TRPBF vs IRFR120NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR1205TRPBF disebabkan oleh Infineon dan IRFR120NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR1205TRPBF IRFR120NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET fifth generation)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 44 A 9.4 A
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max —
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC —
Power Dissition (PD) at TC=25C 107 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK) TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Drain-to-Source Voltage (VDS) — 100 V
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Gambaran Suhu Hubungan Operasi — -55C to +175C
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

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